Tool 07

Transistor Guide

Every kind of transistor a circuit designer meets, one page each: how it works, its curves to play with, basic circuits running live in a simulator, the design rules with numbers, and the lines of a real datasheet that matter, with the pinout as it sits on a breadboard.

01

What a transistor does

A transistor has a control terminal and two power terminals. A small signal on the control terminal sets how much current flows between the two others. That one idea serves two jobs: as a switch, the transistor is either fully off or fully on and turns a load on and off; as an amplifier, it sits in between, and a small change at the control makes a larger copy at the output.

The kinds differ in what the control is. In a bipolar transistor (BJT) a current into the base controls the current from collector to emitter. In a field-effect transistor (FET) a voltage on the gate controls a channel between drain and source, and the gate draws almost no current. The rest of the family are combinations and specialists: the IGBT puts a MOSFET gate in front of a bipolar output, GaN and SiC are field-effect transistors in new materials, the UJT is an old timing part.

Three questions for any transistor

  1. What turns it on? A current (BJT) or a voltage (FET, IGBT), and of which polarity, counted from the emitter or the source: N-type parts turn on with a positive control, P-type parts with a negative one.
  2. Is it on or off with nothing on the control? Most are off. A JFET and a depletion MOSFET conduct until the gate turns them off.
  3. What does fully on look like? A BJT keeps a small drop, VCE(sat)V_{CE(sat)}, 0.05 to 0.4 V, that grows with the current. A MOSFET becomes a resistor, RDS(on)R_{DS(on)}. An IGBT keeps a knee of about one diode drop plus a little resistance.

The same three regions, two vocabularies

What it doesBJT nameFET nameUsed as
Nothing flowscutoffcutoffopen switch
A current set by the control, nearly independent of the output voltageactivesaturationamplifier, current source
Fully on: a small drop or a small resistancesaturationtriode, ohmic, or "linear"closed switch

The word "saturation" names opposite regions in the two families: the fully-on switch for a BJT, the current-source region for a FET. Datasheets and websites mix them up. This guide names a region by what it does, with the textbook name next to it.

02

The family

a page for each
03

Normally on, normally off

interactive

With the gate at the source voltage, VGS=0V_{GS} = 0, a JFET and a depletion MOSFET already conduct: they are normally on and need a gate voltage of the other polarity to turn off. An enhancement MOSFET, like a BJT, is normally off. The symbols say it: a solid channel line for normally on, a broken one for normally off.

  • N-JFET on, 11.0 mA normally on
  • Depletion N-MOSFET on, 11.0 mA normally on
  • Enhancement N-MOSFET off normally off

At VGS=0V_{GS} = 0 the JFET and the depletion MOSFET already carry current: a negative gate voltage is needed to turn them off. The enhancement MOSFET is off at 0 V and starts only above its threshold, here +2 V. The JFET curve stops near +0.5 V because its gate is a diode junction that conducts past that point; a MOSFET gate is insulated and can go either way.

04

Which transistor for the job

A small NPN (2N3904) with a base resistor, or a small N-MOSFET (2N7000, BSS138)

The NPN needs about IC/10I_C / 10 of base current, the MOSFET a gate voltage well above its threshold: check RDS(on)R_{DS(on)} at the gate voltage the pin really gives. A relay coil needs a flyback diode either way.

05

Side by side

TypeControlled byWith no driveFully onTypical driveTypical rangeMain trap
NPNbase currentoffVCE(sat)V_{CE(sat)} 0.05 to 0.4 V0.7 V and IC/10I_C / 10 into the basemilliamps to about 15 A (a 2N3904 0.2 A, a 2N3055 15 A)β\beta spreads threefold
PNPbase current, out of the baseoffVEC(sat)V_{EC(sat)} 0.05 to 0.4 Vbase pulled 0.7 V below the emitteras the NPNa logic pin cannot turn off a PNP on a higher rail
Darlingtonbase currentoffabout 0.7 to 2 V1.2 to 1.4 V on the base, tiny currentup to several ampereshigh saturation voltage, heat
PhototransistorlightoffVCE(sat)V_{CE(sat)}, a few tenths of a voltlight on the junctionmicroamps to milliampsslow with a large pull-up
N-JFETgate voltage, negativeona resistance, tens to hundreds of ohmsVGSV_{GS} between VPV_P and 0milliampsIDSSI_{DSS} and VPV_P spread widely
P-JFETgate voltage, positiveona resistanceVGSV_{GS} between 0 and VPV_Pmilliampsall signs reversed
Depletion MOSFETgate voltage, either signonRDS(on)R_{DS(on)}negative VGSV_{GS} to turn offmilliamps, up to hundreds of voltszero volts on the gate is on
N-MOSFETgate voltage, positiveoffRDS(on)R_{DS(on)}, milliohms to ohms10 V standard, 4.5 V or 2.5 V logic-levelmilliamps to hundreds of amperesVGS(th)V_{GS(th)} is not the on voltage
P-MOSFETgate voltage, negativeoffRDS(on)R_{DS(on)}, higher than an N part of the same sizegate 10 V below the sourceup to tens of amperesgate swing must stay within its rating
IGBTgate voltage, positiveoffa knee, VCE(sat)V_{CE(sat)} 1.5 to 2.5 V15 V on, 0 or negative off600 V to kV, tens to hundreds of amperestail current at turn-off
GaN, SiCgate voltageoffRDS(on)R_{DS(on)}GaN 5 V, with 6 V the absolute maximum; SiC 15 to 20 V, negative off100 V to over 1 kVnarrow gate-voltage window
UJTemitter voltage reaching a fraction of the supplyoffa negative-resistance dischargeηVBB\eta V_{BB} plus a diode droppulsesobsolete; a 555 does the job
06

Reading a datasheet

Most datasheets follow the same layout, and two of their sections are often confused. Absolute maximum ratings are limits not to be exceeded even for an instant; running a part at them guarantees nothing. Electrical characteristics are what the part does, each line guaranteed only at the test condition printed next to it. "Typ" is a typical value, not a promise: a design uses min and max.

  1. The pinout drawing. The same part number can have different pinouts from different manufacturers, and the package drawing is the only reference.
  2. The voltage rating (VCEOV_{CEO}, VDSSV_{DSS}), with margin for spikes.
  3. The on-state line at the conditions of the job: VCE(sat)V_{CE(sat)} at the collector and base currents of the circuit, or RDS(on)R_{DS(on)} at the gate voltage the driver really has.
  4. The gain or the threshold, with its spread: hFEh_{FE} min at the current of the job; VGS(th)V_{GS(th)} min and max, measured at a tiny current (often 250 µA or 1 mA), which is where the part only starts to conduct.
  5. The thermal resistance, to turn power into temperature: TJ=TA+PRθJAT_J = T_A + P R_{\theta JA}. The current rating on page one usually assumes a case held at 25 °C, which no breadboard does.
  6. The graphs: they show how every number moves with current and temperature, and the safe operating area of a power part.

The calculation that decides whether a switch survives, for a MOSFET:

P=ID2 RDS(on)TJ=TA+P RθJAP = I_D^2\, R_{DS(on)} \qquad T_J = T_A + P\, R_{\theta JA}

An example with real numbers: a 2N7000 switching 75 mA from a 5 V pin. Its datasheet guarantees RDS(on)≤5.3 ΩR_{DS(on)} \le 5.3\ \Omega at VGS=4.5V_{GS} = 4.5 V, ID=75I_D = 75 mA and 25 °C; at 125 °C the resistance can be up to 1.8 times larger, some 9.5 Ω. So P≈0.0752×9.5=0.053P \approx 0.075^2 \times 9.5 = 0.053 W, and with RθJA=312.5R_{\theta JA} = 312.5 °C/W for its TO-92 the junction runs about 17 °C above the room: fine. At its 200 mA rating the 4.5 V line no longer applies, since it is tested at 75 mA, and even 9.5 Ω gives 0.38 W and some 120 °C of rise: time for a larger MOSFET.

07

On the bench: pinouts and a meter check

A multimeter on its diode range finds the junctions. A bipolar transistor reads like two diodes back to back: 0.5 to 0.7 V from the base to each of the other two pins (red lead on the base for an NPN, black for a PNP), nothing between collector and emitter. A power MOSFET shows its body diode, 0.4 to 0.7 V from source to drain for an N-channel part, and nothing else, unless the gate holds charge from the last touch: shorting gate to source first discharges it.

Two parts in the same TO-92 can have mirror-image pinouts: a 2N3904 is E-B-C seen from the flat face, a BC547 is C-B-E. The 2N7000 is S-G-D in TO-92, while the SOT-23 2N7002 in the same datasheet is G-S-D. The drawings below come from each manufacturer's datasheet.

EBCflat face
2N3904 TO-92
EBCflat face
PN2222A TO-92
CBEflat face
BC547B TO-92
EBCflat face
2N3906 TO-92
CBEflat face
BC557B TO-92
BCETO-220

tab: C

TIP120 TO-220
Pinout described in words on its card
ULN2003A PDIP-16
Pinout described in words on its card
TEPT4400 T-1 (3 mm)
Pinout described in words on its card
4N25 DIP-6
DSGflat face
J111 TO-92
DSGflat face
2N5457 TO-92
DGSflat face
LSK170 TO-92
SDGflat face
2N5460 TO-92
DGSflat face
J176 TO-92
SGDflat face
DN2540N3 TO-92
DGS
BSS139I SOT-23
SGDflat face
2N7000 TO-92
DGSflat face
BS170 TO-92
DGS
BSS138 SOT-23
DGS
BSS84 SOT-23
DGSflat face
BS250P TO-92 (E-Line)
Pinout described in words on its card
CD4007UBE PDIP-14
GDSTO-220

tab: D

IRLZ44NPbF TO-220
GDSTO-220

tab: D

IRF540NPbF TO-220
GDSTO-220

tab: D

IRF9540NPbF TO-220
GCETO-247

tab: C

IKW40N120H3 TO-247
GCETO-247

tab: C

FGH40N60SMD TO-247
Pinout described in words on its card
EPC2045 Bumped die
GDSTO-247

tab: D

C3M0065090D TO-247
Pinout described in words on its card
2N2646 TO-18
AGKflat face
2N6027 TO-92
08

Circuits made of several transistors

Falstad's simulator, one at a time

Most real circuits use transistors in pairs or groups. These five building blocks run in the simulator, and each is the core of a larger circuit: the pair and its current mirror at the input of an op-amp, the push-pull at the output of most audio amplifiers, the multivibrator in an LED flasher, and the CMOS inverter in CMOS logic gates.

Simulation

Current mirror

Q1 is wired as a diode: its collector feeds its own base, so 10 kΩ from 12 V sets about 1.1 mA through it. Q2 shares its base voltage and copies that current into whatever its collector is tied to, here a voltage set by a slider.

  1. Drag Collector voltage from 12 V down to 1 V and read the ammeter.
  2. Go under about 0.3 V and watch the copy fail.

What to see. Two matched transistors with the same VBEV_{BE} carry the same collector current, so the output current is set by the 10 kΩ and not by what Q2 drives, down to the point where Q2 saturates. Real mirrors drift a little with VCEV_{CE} (the Early effect) and need their two transistors at the same temperature, which is why they come on one chip.

Open in the full simulator CircuitJS by Paul Falstad, loaded from falstad.com
Simulation

Differential pair

Two NPNs share a 1 mA tail current from -12 V. One base gets a 10 mV sine, the other is grounded; each collector has 10 kΩ to 12 V.

  1. Compare the two collector scopes: same size, opposite phase.

What to see. The tail current is fixed, so whatever one transistor gains the other loses: the pair amplifies the DIFFERENCE between its two bases, gain about gmRC/2g_m R_C / 2 on each side, near 100 here. The same voltage on both bases would only move the emitters. That is the input stage of every op-amp.

Open in the full simulator CircuitJS by Paul Falstad, loaded from falstad.com
Simulation

Push-pull output: class B against class AB

Two complementary emitter followers (an NPN pushing, a PNP pulling) drive 100 Ω loads from +/-12 V with the same 5 V sine. On the left the bases are tied to the input (class B); on the right two diodes hold them 1.2 V apart (class AB).

  1. Compare the two output scopes, especially where the wave crosses zero.

What to see. A follower only conducts once its base is a VBEV_{BE} past the emitter, so with tied bases neither transistor conducts while the input is within about 0.6 V of zero: a flat step at every zero crossing, crossover distortion, which the ear hears clearly. The two diodes pre-bias both transistors to the edge of conduction, and the step disappears. Real amplifiers add small emitter resistors so the idle current cannot run away with temperature.

Open in the full simulator CircuitJS by Paul Falstad, loaded from falstad.com
Simulation

Astable multivibrator

Two NPNs, each with an LED in its collector, each holding the other off through a capacitor: the oldest transistor oscillator, two LEDs taking turns.

  1. Watch the LEDs alternate and the base-emitter voltage of Q2 on the scope.
  2. Drag Timing resistor R_B1 to change how long one half lasts.

What to see. When Q1 switches on, its collector drops by about 5 V and the capacitor carries that step to the base of Q2, which goes negative and turns off. The base of Q2 then charges back up through its resistor; at about 0.6 V Q2 turns on and the roles swap. Each half lasts about 0.69 R C. The base swings to -4 V or so, close to the 5 to 6 V a base-emitter junction survives in reverse: at higher supplies a diode in each base is needed.

Open in the full simulator CircuitJS by Paul Falstad, loaded from falstad.com
Simulation

CMOS inverter

A P-MOSFET from 5 V and an N-MOSFET to ground, gates tied together as the input, drains tied together as the output. An ammeter reads the supply current.

  1. Drag Input voltage from 0 to 5 V and watch the output.
  2. Stop around 2.5 V and read the ammeter.

What to see. At either end one transistor is fully on and the other fully off: the output sits at a rail and no current flows from the supply, which is why CMOS logic draws almost nothing when it is not switching. In the middle both conduct at once and a current shoots through: every edge of a CMOS signal costs a little of it, and a slow input edge costs a lot.

Open in the full simulator CircuitJS by Paul Falstad, loaded from falstad.com